Stephen Saddow
University of South Florida, Electrical Engineering, Faculty Member
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... Page 7. Advances in Silicon Carbide Processing and Applications Stephen E. Saddow AnantAgarwal Editors ^ Artech House, Inc. Boston London www.artechhouse.com ... Stephen E. Saddow Tampa, Florida Anant Agarwal Durham, North Carolina... more
... Page 7. Advances in Silicon Carbide Processing and Applications Stephen E. Saddow AnantAgarwal Editors ^ Artech House, Inc. Boston London www.artechhouse.com ... Stephen E. Saddow Tampa, Florida Anant Agarwal Durham, North Carolina June 2004 XIII Page 18. I ...
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One of the necessary pieces of equipment needed for ultra-wideband (UWB) radio effects measurements is a suitable UWB field probe and radiating antenna. The conical monopole antenna (CMA) is an easy-to-fabricate, inexpensive, and useful... more
One of the necessary pieces of equipment needed for ultra-wideband (UWB) radio effects measurements is a suitable UWB field probe and radiating antenna. The conical monopole antenna (CMA) is an easy-to-fabricate, inexpensive, and useful UWB device that can be used for both of these applications. In this report we present information that should allow both antenna designers and users to quickly assemble a custom CMA to meet their design goals. A subjective explanation of the theory of operation is presented along with analytical expressions that predict the radiated and received pulse shapes. Experimental results are presented to verify the CMA theory of operation; these results also serve as an example of how UWB radiation can be monitored with a CMA during field measurements.
Research Interests: Radiation, Theory, Measurement, Shape, Pulse Shaping, and 3 moreOperation, Bandwidth, and Ultra Wideband
The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical photoconductive (PC) switches. Both photovoltaic and photoconductive effects are reported, which... more
The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical photoconductive (PC) switches. Both photovoltaic and photoconductive effects are reported, which were observed on switches using both geometries and measured at several wavelengths near the 6H-SiC absorption edge. PC techniques were employed to measure the surface and bulk carrier lifetimes of 40 and 200 ns, respectively. The switches displayed a high-speed photovoltaic response to picosecond laser excitations in the UV and visible spectral regions. In particular, efficient subnanosecond optical absorption processes were observed in the visible region. The photovoltage was measured as a function of both laser wavelength (and hence absorption depth) and laser beam position within the switching gap. The switch response to picosecond laser pulses in the UV, violet, green, and red spectral regions was shown to have subnanosecond photovoltaic response times. Finally, since the optical absorption coefficient had not been well established for device-grade 6H-SiC, the optical absorption coefficient near the 6H-SiC bandgap energy (Eg) was also measured, and the bandgap was determined to be approximately 3.1 eV.
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The D-center in 6H-SiC is a boron-related deep hole trap observed previously in LPE-grown 6H-SiC diodes. We report deep level transient spectroscopy (DLTS) measurements in which the D-center signature is observed in high-purity n- and... more
The D-center in 6H-SiC is a boron-related deep hole trap observed previously in LPE-grown 6H-SiC diodes. We report deep level transient spectroscopy (DLTS) measurements in which the D-center signature is observed in high-purity n- and p-type epitaxial layers formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture cross section between 1×10-14 cm2 and 3×10-14 cm2 was determined for this level. Even though the D-center in these diodes is thought to arise from unintended trace contamination, we observed within the same diode a factor of twenty greater density of this level in the n-type layer than in the p-type layer, which is explained by a recently proposed site competition model for impurity doping during 6H-SiC CVD growth.
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Abstract: Graphene, can be used to make an implantable neuronal prosthetic which can be indefinitely implanted in vivo. Graphene electrodes are placed on a 3C-SiC shank and electrical insulation is provided by conformal insulating SiC.... more
Abstract: Graphene, can be used to make an implantable neuronal prosthetic which can be indefinitely implanted in vivo. Graphene electrodes are placed on a 3C-SiC shank and electrical insulation is provided by conformal insulating SiC. These materials are not only chemically resilient, physically durable, and have excellent electrical properties, but have demonstrated a very high degree of biocompatibility. Graphene also has a large specific capacitance in electrolytic solutions as well as a large surface area which reduces the ...
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Abstract Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600 C to 1750 C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to... more
Abstract Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600 C to 1750 C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to deliver the silane to ...
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Crystalline silicon carbide (SiC) and silicon (Si) biocompatibility was evaluated by directly culturing three mammalian cell lines on these semiconducting substrates. Cell proliferation and adhesion quality were studied using MTT... more
Crystalline silicon carbide (SiC) and silicon (Si) biocompatibility was evaluated by directly culturing three mammalian cell lines on these semiconducting substrates. Cell proliferation and adhesion quality were studied using MTT [3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide] assays and fluorescent microscopy. The reported results show that SiC is indeed a more biocompatible substrate than Si. The surface wettability of SiC and Si samples was evaluated through static contact angle measurements, which provided interesting information regarding the influence of different cleaning procedures on the SiC surfaces. The cell proliferation data are discussed in light of the contact angle measurements results. This joint analysis leads to interesting conclusions that may help to uncover the main factors that define a semiconductor's biocompatibility.
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Page 1. Materials Science Forum Vols. 338-342 (2000) pp 245-248 © (2000) Trans Tech Publications, Switzerland doi:10.4028/www.scientific.net/MSF.338-342.245 All rights reserved. No part of contents of this paper may be ...
Abstract Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these... more
Abstract Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the ...
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Abstract This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400 C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The... more
Abstract This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400 C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The Al depth profile was almost ...
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Page 1. P21 A Hybrid Coherent Fiber-Optic Probe For Remote Sensing Of Electra-Optic Effects in GaAs bY David L. Mazzoni, Kyuman Cho, Stephen Saddow, and Christopher C. Davis Electrical Engineering Department University of Maryland College... more
Page 1. P21 A Hybrid Coherent Fiber-Optic Probe For Remote Sensing Of Electra-Optic Effects in GaAs bY David L. Mazzoni, Kyuman Cho, Stephen Saddow, and Christopher C. Davis Electrical Engineering Department University of Maryland College Park, MD 20742 Summary ...
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... 1(b)). However mechanical polishing generates scratches and subsurface damage. NOVASiC has developed a CMP process for hexagonal SiC called StepSiC® which was tested for 3C-SiC as a starting point in the process development. ...
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