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In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple... more
In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bar...
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A complete model for GaSb TPV converters considering multiple real conditions (spectra, temperature, ARC, size, number and characteristics of grid fingers, size of busbar, etc.) is presented. The model has been applied to GaSb TPV... more
A complete model for GaSb TPV converters considering multiple real conditions (spectra, temperature, ARC, size, number and characteristics of grid fingers, size of busbar, etc.) is presented. The model has been applied to GaSb TPV converters fabricated in our ...
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A model for the performance of concentrator solar cells when receiving the light inside a wide-angle cone of light is presented. The application range of the model goes from single to multijunction concentrator solar cells. In this paper,... more
A model for the performance of concentrator solar cells when receiving the light inside a wide-angle cone of light is presented. The application range of the model goes from single to multijunction concentrator solar cells. In this paper, the model is applied to a 1000 sun GaAs solar cell operating inside a TIR-R optical concentrator. The model predicts the efficiency loss with regard to perpendicular illumination. The model also indicates that the optimum cell structure design for normal incidence is almost the same than for the case of the solar cell operating under a wide-angle cone of light. Nevertheless, the conclusion of this case should not be considered of general validity and each combination of optical concentrator and solar cell must be specifically analyzed.
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Choices for the epitaxial growth of GalnP/GaAs dual junction concentrator solar cells. Ivan Garcia, Ignacio Rey-Stolle, Beatriz Galiana and Carlos Algora. Institute) de Energfa Solar - Universidad Politecnica de Madrid ETSI... more
Choices for the epitaxial growth of GalnP/GaAs dual junction concentrator solar cells. Ivan Garcia, Ignacio Rey-Stolle, Beatriz Galiana and Carlos Algora. Institute) de Energfa Solar - Universidad Politecnica de Madrid ETSI Telecomunicacion, Avda Complutense, 38 Madrid. Tel. ...
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ABSTRACT
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... Ignacio Rey-Stolle, Carlos Algora, Ivan Garcia, Mathieu Baudrit, Pilar Espinet, Beatriz Galiana and Enrique Barrig6n Instituto de Energia Solar - Universidad Politecnica de ... is the case, to model the solar cell it would be enough... more
... Ignacio Rey-Stolle, Carlos Algora, Ivan Garcia, Mathieu Baudrit, Pilar Espinet, Beatriz Galiana and Enrique Barrig6n Instituto de Energia Solar - Universidad Politecnica de ... is the case, to model the solar cell it would be enough to divide its area into elementary units so small that ...
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In this work, we have evaluated the reliability of epoxy packaged light emitting diodes (LEDs) for outdoor applications by specific tests to enhance catastrophic failures that appear under high temperature and humidity operation... more
In this work, we have evaluated the reliability of epoxy packaged light emitting diodes (LEDs) for outdoor applications by specific tests to enhance catastrophic failures that appear under high temperature and humidity operation conditions. The different failure mechanisms were analyzed observing two main types: one is open circuit catastrophic failures induced by moisture and the other one power luminosity degradation. The influence of temperature and humidity on catastrophic failures was modelled using the Arrhenius–Peck law obtaining an activation energy of 0.87 eV and a Peck parameter of 2.29. MTTF value of 1.582 × 106 h at low bias current, 10 mA, has been evaluated.
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Page 1. A comparative study of BSF layers for GaAs-based single-junction or multijunction concentrator solar cells This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2006 Semicond. Sci.... more
Page 1. A comparative study of BSF layers for GaAs-based single-junction or multijunction concentrator solar cells This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2006 Semicond. Sci. Technol. 21 1387 ...
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ABSTRACT This work reports changes in the structural properties of sputtered GaAs layers deposited on Si (100) substrates induced by thermal annealing under different arsine atmospheres. The effects of the AsH3 partial pressure (PAsH3)... more
ABSTRACT This work reports changes in the structural properties of sputtered GaAs layers deposited on Si (100) substrates induced by thermal annealing under different arsine atmospheres. The effects of the AsH3 partial pressure (PAsH3) and of the annealing temperature in the GaAs layer properties were analyzed by means of in-situ reflectance spectroscopy, in-situ transient reflectance at 2.65 eV, X-Ray diffraction and atomic force microscopy. The results obtained reveal a direct correlation between the AsH3 partial pressure and the evolution of the GaAs surface morphology as well as the annihilation of Ga clusters formed during the sputtering procedure.
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... We thank CH Ambrose for her helpful comments on the English translation of the manuscript. In the memory of IE-01 -~>~ 9E-02 I-"~ 8E-02 ... 23. A. Leonhardt, K. Buchheiser and G. Ktihn, Kristal und Technik 9, 197 (1974). 24.... more
... We thank CH Ambrose for her helpful comments on the English translation of the manuscript. In the memory of IE-01 -~>~ 9E-02 I-"~ 8E-02 ... 23. A. Leonhardt, K. Buchheiser and G. Ktihn, Kristal und Technik 9, 197 (1974). 24. L. Mayet, B. Montegu and M. Gavand, J. Cryst. ...
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The present work presents some lines of research aimed to contribute to a better performance of multi-junction solar cells at very high concentrations (∼1000suns) by minimising the series resistance of these devices. In the first section,... more
The present work presents some lines of research aimed to contribute to a better performance of multi-junction solar cells at very high concentrations (∼1000suns) by minimising the series resistance of these devices. In the first section, a set of results is presented to ascertain the potential of tellurium as a possible n-type dopant to improve the performance of tunnel junctions
Research Interests: Crystal Growth, Solar Cell, Doping, Anomaly, Photoconductivity, and 2 moreGaAs and Series Resistance(GaAs and Series Resistance)
(GaAs and Series Resistance)
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Page 1. 1174 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 44, NO. 7, JULY 1997 Influence of Size Factors in the Electroluminescent Emission of Large Area GaAs IRED's Rosa F. Reyna, Antonio Martí, Carlos Algora, Juan C. Maroto, and... more
Page 1. 1174 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 44, NO. 7, JULY 1997 Influence of Size Factors in the Electroluminescent Emission of Large Area GaAs IRED's Rosa F. Reyna, Antonio Martí, Carlos Algora, Juan C. Maroto, and Gerardo L. Araújo ...
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The results of the wirebonding technique application to make connections on high concentrator solar cells are presented in this paper. The most usual wirebonding techniques in current microelectronic industry have been analyzed (i.e.,... more
The results of the wirebonding technique application to make connections on high concentrator solar cells are presented in this paper. The most usual wirebonding techniques in current microelectronic industry have been analyzed (i.e., aluminum wedge bonding and thermosonic gold ball bonding). In the first part of the paper the influence of wirebonding processes on solar cell performance is discussed theoretically.
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Chemical composition of Cu/Ge layers deposited on a 1μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5×1018cm−3) and its interface were examined ex situ by XPS combined with Ar+ sputtering. These measurements... more
Chemical composition of Cu/Ge layers deposited on a 1μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5×1018cm−3) and its interface were examined ex situ by XPS combined with Ar+ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the