A. Uranga
Universitat Autònoma de Barcelona, Enginyeria Electronica, Faculty Member
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A demonstrator through the VLSI CMOS 2. 5µm double-poly process (CNM25) of the Centre Nacional de Microelectronica (CNM) only for teaching purposes has been implemented. This demonstrator allows not only the test using normal electronic... more
A demonstrator through the VLSI CMOS 2. 5µm double-poly process (CNM25) of the Centre Nacional de Microelectronica (CNM) only for teaching purposes has been implemented. This demonstrator allows not only the test using normal electronic lab instrumentation of simple analog building blocks and more complex circuits through external connections but also the simulation of these circuits with the LEVEL=2 MOSFET simulation models files provided using an Spice like simulator (for instance the evaluation kit of Pspice).
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In this paper we present a high-transimpedance, low-noise and noise-matched pre-amplifier for integrated CMOS-MEMS sensing devices. The thermomechanical noise of a MEMS resonator has been characterized under atmospheric conditions in... more
In this paper we present a high-transimpedance, low-noise and noise-matched pre-amplifier for integrated CMOS-MEMS sensing devices. The thermomechanical noise of a MEMS resonator has been characterized under atmospheric conditions in order to prove the low input noise of the designed transimpedance pre-amplifier. Results of the CMOS-MEMS system in a Pierce oscillator configuration demonstrates the lowest floor noise reported until now in a capacitively coupled CMOS-MEMS oscillator.
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We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the... more
We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay is monolithically integrated in the back end of line of a commercial standard CMOS technology (AMS 0.35 μm) and released by means of a simple one-step mask-less wet etching. The fabricated torsional relay exhibits an extremely steep switching behaviour symmetrical about both contact sides with an on-state contact resistance in the k-range throughout the on-off cycling test.
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ABSTRACT
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This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology,... more
This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process consisting on a maskless wet etching. A clamped-clamped beam with resonance frequency of 290 MHz exhibiting Q-factors of 970 in
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ABSTRACT This paper reports on the study and characterization of the non-linear regime of two CMOS-NEMS flexural resonators electrically transduced for mechanical memory applications. A cantilever and a clamped–clamped beam... more
ABSTRACT This paper reports on the study and characterization of the non-linear regime of two CMOS-NEMS flexural resonators electrically transduced for mechanical memory applications. A cantilever and a clamped–clamped beam nanoelectromechanical resonators have been monolithically fabricated using a commercial CMOS technology. An increase of the excitation voltage has forced the NEMS to present a non-linear resonant behavior. It has been demonstrated how this bistable NEMS response allows the implementation of a dynamic logic memory device where the control of the switching between the two states is performed through an amplitude modulation of the driving signal. Voltages needed for memory operation in the mV range and with higher difference between “high” and “low” values than the state of the art, together with the NEMS top-down fabrication in CMOS constitutes a promising alternative for operative mechanical memory devices.
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Water vapor sensing characterization of a metal resonator fabricated with an industrial 0.35 μm CMOS technology is reported. The resonator frequency is ∼13.2 MHz and exhibits a sensitivity magnitude of ∼3.5 kHz per %RH without requiring... more
Water vapor sensing characterization of a metal resonator fabricated with an industrial 0.35 μm CMOS technology is reported. The resonator frequency is ∼13.2 MHz and exhibits a sensitivity magnitude of ∼3.5 kHz per %RH without requiring any additional hygroscopic coating layer. An on-chip integrated oscillator circuit enables an unprecedented resolution of 0.005 %RH.
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In this work, thin-film bulk acoustic resonators (FBARs) are implemented as punctual mass sensors, with the purpose of future integration in biomolecular sensing systems, where selective spatial detection is required. The piezoelectric... more
In this work, thin-film bulk acoustic resonators (FBARs) are implemented as punctual mass sensors, with the purpose of future integration in biomolecular sensing systems, where selective spatial detection is required. The piezoelectric thin film is a (002)AlN membrane, sputtered over Ti/Pt on a (001)Si wafer, and released by surface micromachining of silicon. The effective lateral area of resonator is 50×50μm, and the thicknesses of AlN and Ti/Pt layers are 1000 and 180 nm, respectively. A punctual mass of a C/Pt/Ga composite with a contact surface much smaller compared to that of the resonator’s electrode is deposited on the top electrode of the resonators, by means of a focused ion beam. Selected areas of the electrode, especially near the center of the resonator, were chosen to growth the composite with lateral dimensions in the units of micrometers, and thickness on the order of several nanometers. Based on the mass-loading principle, the sensor changed its resonance frequency i...
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ABSTRACT In this paper a self-oscillator based on a polysilicon free-free beam resonator monolithically integrated and packaged in a 0.35 µm complementary metal-oxide-semiconductor (CMOS) technology is presented. The oscillator is capable... more
ABSTRACT In this paper a self-oscillator based on a polysilicon free-free beam resonator monolithically integrated and packaged in a 0.35 µm complementary metal-oxide-semiconductor (CMOS) technology is presented. The oscillator is capable of providing a 350 mVPP sinusoidal signal at 25.6 MHz, with a bias polarization voltage of 7 V. The microelectromechanical systems (MEMS) resonator is packaged using only the back-end-of-line metal layers of the CMOS technology, providing a complete low-cost CMOS-MEMS processing for on-chip frequency references.
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This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is... more
This paper presents the design, fabrication and characterization of a high-sensitivity mass sensor based on a laterally resonating metal cantilever that is fully compatible with standard CMOS technologies, and which post-CMOS process is based on a single step wet etching process without the need of any additional lithographic process. The system uses electrostatic actuation and capacitive readout performed by a high-sensitivity readout circuitry monolithically integrated. The expected mass sensitivity of the metal resonators presented is around 1 ag/Hz and 4.5 ag/Hz for punctual mass and uniform mass deposition respectively. These sensitivities have been corroborated experimentally by means of two kinds of experiments: deposition of a punctual mass and deposition of a thin film of gold.
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Research Interests: Computer Science, Biomedical Engineering, Semiconductors, Medicine, Systems Integration, and 15 moreAnimals, Cmos, Rats, Chopper, Sciatic Nerve, Action potential, Flicker Noise, Electrodiagnosis, Amplifier, Amplifiers (Electronic), Action Potentials, Equipment Design, Equipment Failure Analysis, Electrical And Electronic Engineering, and Power Dissipation
Analytical and finite-element models of a localized-mass sensor fabricated with thin-film bulk acoustic wave resonator (FBAR) are reported. While our group demonstrated FBAR-based localized-mass sensors, no previous modeling of these... more
Analytical and finite-element models of a localized-mass sensor fabricated with thin-film bulk acoustic wave resonator (FBAR) are reported. While our group demonstrated FBAR-based localized-mass sensors, no previous modeling of these sensors is found in the literature. The finite-element model (FEM) defines the boundary conditions and performs parametric analysis of the sensor's mass loading, whereas the analytical approach takes advantage on a modified Mason's model to describe the transmission-line circuit of the sensor. The sensitivity of the resonance frequency to location and size of mass deposition has been studied. Both the experimental and modeled responsivities exhibit a nonlinear dependence on the location and size of the localized-mass.
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Research Interests: Electrical Engineering, Electronic Engineering, Materials Science, MEMS, Electronics, and 15 moreMicroelectromechanical systems, High Frequency, Electron Device, Fabrication, Radio Frequency, Cmos, Etching, Chip, Resonator, Maskless Lithography, Electrodes, Monolithic Integration, Electrical And Electronic Engineering, Capacitive Sensing, and Transceivers
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Dr. Gabriel Abadal, Departament d'Enginyeria Electrònica, Universitat Autonòma de Barcelona, Bellaterra, Barcelona, SPAIN. Dr. Jordi Teva, MIC-Institut for Mikro-og Nanoteknologi DTU. Kgs Lyngby DENMARK. Mr. Jaume Verd, Departament... more
Dr. Gabriel Abadal, Departament d'Enginyeria Electrònica, Universitat Autonòma de Barcelona, Bellaterra, Barcelona, SPAIN. Dr. Jordi Teva, MIC-Institut for Mikro-og Nanoteknologi DTU. Kgs Lyngby DENMARK. Mr. Jaume Verd, Departament de Física, Universitat de les ...
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Two piezoelectric micromachined ultrasonic transducers (PMUTs) with a mode shape like a free membrane and a resonance frequency around 7 MHz in liquid environment are proposed in this paper. Here we evaluate the influence of linear holes... more
Two piezoelectric micromachined ultrasonic transducers (PMUTs) with a mode shape like a free membrane and a resonance frequency around 7 MHz in liquid environment are proposed in this paper. Here we evaluate the influence of linear holes (two or four holes) in the movement and consequently in the output pressure. FEM simulations show how the linear holes increase the membrane velocity at least 1.4x factor in relation with the clamped PMUT. Also, the experimental verification in fluorinert (FC-70) allows to demonstrate the capability to use them in liquid with an output surface pressure in the range of 300 Pa/V at 7 MHz.
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The advantage of combining a stiff microcantilever coupled mechanically to a soft nano cantilever in terms of mass responsivity and readout capacitive detectability is presented. The large spring constant and coupling capacitance values... more
The advantage of combining a stiff microcantilever coupled mechanically to a soft nano cantilever in terms of mass responsivity and readout capacitive detectability is presented. The large spring constant and coupling capacitance values of the microcantilever allow maximizing the detectability quantified in terms of motional resistance. The small effective mass of the nanocantilever provide to the whole system with an optimized mass responsivity. A figure of merit that accounts for both characteristics, mass responsivity and detectability, is defined, calculated from FEM simulations and measured from mass detection experiments, in order to demonstrate that the combined system improve the performance of the individual components.
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ABSTRACT A MEMS accelerometer, its acceleration-sensing devices being FBARs, is described. The FBAR-based accelerometer is comprised by a movable, seismic mass, which is supported by one or more beams. Each beam embeds an FBAR or can be... more
ABSTRACT A MEMS accelerometer, its acceleration-sensing devices being FBARs, is described. The FBAR-based accelerometer is comprised by a movable, seismic mass, which is supported by one or more beams. Each beam embeds an FBAR or can be an FBAR by itself, whose resonant frequency changes when the beam bends due to the application of acceleration forces to the seismic mass. Due to mechanical coupling between the beams and the mass, the displacement of the latter produces a stress in the beams, which is transmitted to the FBAR low frequency and high frequency characterization of the resonant accelerometer has been carried out, a static-acceleration sensitivity of 250 kHz/g being found for the quad-beam, embedded-FBAR device.
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ABSTRACT This paper presents the design, fabrication and characterization of a fully monolithic 11-MHz oscillator circuit operating with a low voltage MEMS resonator biased below the nominal 3.3V operation of the commercial 0.35-μm CMOS... more
ABSTRACT This paper presents the design, fabrication and characterization of a fully monolithic 11-MHz oscillator circuit operating with a low voltage MEMS resonator biased below the nominal 3.3V operation of the commercial 0.35-μm CMOS technology used to fabricate the device. The CMOS-MEMS oscillator comprises a polysilicon double-ended tuning fork (DETF) resonator embedded in a differential Pierce oscillator scheme. The device is suitable for RF applications and ultrasensitive mass sensing.
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This paper demonstrates the feasibility of a novel fabrication approach of MEMS resonators above standard CMOS circuitry and with zero-level vacuum package. As a proof of concept a monolithical CMOS-MEMS-closed loop oscillator showing... more
This paper demonstrates the feasibility of a novel fabrication approach of MEMS resonators above standard CMOS circuitry and with zero-level vacuum package. As a proof of concept a monolithical CMOS-MEMS-closed loop oscillator showing dual-clock capabilities (11.9 MHz and 24.5 MHz) is presented. These two frequencies correspond to two different resonator modes, specifically the torsional and vertical out of plane, of a paddle shaped MEMS resonator.
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In this paper a 25 MHz free-free beam flexural resonator monolithically integrated in a 0.35 um CMOS technology is presented. A comparison between the frequency response and electrical characteristics between free-free beam and... more
In this paper a 25 MHz free-free beam flexural resonator monolithically integrated in a 0.35 um CMOS technology is presented. A comparison between the frequency response and electrical characteristics between free-free beam and clamped-clamped beams shows higher qualities factor for free-free beams which will allow better oscillators for frequency references in terms of phase noise.
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ABSTRACT This paper reports the thermal characterization of MEMS resonator-based oscillators fabricated using a conventional 0.35-mum CMOS process. The MEMS resonators are sub-micrometer scale metal beams which resonance frequency is... more
ABSTRACT This paper reports the thermal characterization of MEMS resonator-based oscillators fabricated using a conventional 0.35-mum CMOS process. The MEMS resonators are sub-micrometer scale metal beams which resonance frequency is highly dependent on temperature (up to -2055 ppm/degC). Thanks to the monolithic integration of the oscillator electronics, the oscillator frequency stability is better than 1 ppm allowing temperature resolutions up to 0.00019degC for 0.1 s averaging time, which is at least one order of magnitude better than the best previously reported.
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AbstractWe present a capacitive readout system used to detect the oscillation of a submicrometer-scale cantilever integrated monolithically in a 3.3V, 0.35µm CMOS standard technology from AMS. This readout system presents a total... more
AbstractWe present a capacitive readout system used to detect the oscillation of a submicrometer-scale cantilever integrated monolithically in a 3.3V, 0.35µm CMOS standard technology from AMS. This readout system presents a total parasitic capacitance at the sense node ...
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Page 1. FREQUENCY SYNTHESIS USING ON-CHIP MICROMECHANICAL RESONATOR Joan Lluis López, Jordi Teva, Francesc Torres, Gabriel Abadal , Arantxa Uranga, Núria Barniol Departament d'Enginyeria Electrònica ...
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Objectives. The goal of this work is to study and develop an electrical integrated system that allows the control of the basic functions (such as micturition, defecation, and erection) by sacral root stimulation in paraplegic patients.... more
Objectives. The goal of this work is to study and develop an electrical integrated system that allows the control of the basic functions (such as micturition, defecation, and erection) by sacral root stimulation in paraplegic patients. Materials and Methods. The system has been implemented using a commercially available Mietec CMOS technology. It is based on an external transceiver unit, which provides data and energy to the implant device through a bi-directional inductive link, and an implantable batteryless module that generates the needed current pulses, according to the orders received from the external unit. To test the electrode-tissue interface and system performance, an impedance measurement circuit has been included. Results. The three independent channel stimulators allow an exhaustive control of the waveform parameters (amplitude, pulse width, frequency) independent of the placement of the external coil respect to the internal device. Conclusion. The architecture of the new stimulator, applied over the sacral roots, can be used to control the voiding of the bladder. The system allows an independent distance programmable stimulation. The impedance measurement circuit implemented allows an easy and systematic performance test.
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ABSTRACT This paper presents a UHF CMOS MEMS resonator working at 384MHz at its bulky mechanical mode. The novel topology proposed allows us to design the resonator taking into account the coupling area of the movable resonator as an... more
ABSTRACT This paper presents a UHF CMOS MEMS resonator working at 384MHz at its bulky mechanical mode. The novel topology proposed allows us to design the resonator taking into account the coupling area of the movable resonator as an important parameter in the design. The structure is fabricated using a commercial CMOS technology. This fact allows to integrate directly the microelectromechanical structure with the electronic. This work presents the measurement of both, the stand alone resonator and the resonator with an amplification circuitry.
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A novel technique for global packaging of MEMS devices using standard CMOS technology is presented. A MEMS polysilicon resonator is fabricated and on-chip packaged using two metal layers already available from the CMOS technology. A... more
A novel technique for global packaging of MEMS devices using standard CMOS technology is presented. A MEMS polysilicon resonator is fabricated and on-chip packaged using two metal layers already available from the CMOS technology. A simple buffered HF wet etching process is performed in house to release the MEMS resonator while metal deposition is used to vacuum seal the zero-level
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ABSTRACT In this paper, a novel fully integrated CMOS-MEMS filter implemented on a commercial CMOS technology is presented. The combination of mechanical and electrical coupling is used to enhance the response of the band pass filter. In... more
ABSTRACT In this paper, a novel fully integrated CMOS-MEMS filter implemented on a commercial CMOS technology is presented. The combination of mechanical and electrical coupling is used to enhance the response of the band pass filter. In particular, a 20 dB shape factor as low as 2 and a 35 dB stopband rejection are achieved. Moreover, the topology of the device allows obtaining a dual-bandpass filter behavior, presenting a tunable bandwidth and a deep notch between bands. Results show a dual-band filter with a 22 dB inner stopband rejection, center frequencies at 27.5 and 27.8 MHz, respectively, and a 0.6% relative bandwidth.
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Research Interests: Materials Engineering, Condensed Matter Physics, Materials Science, Microelectromechanical systems, Optoelectronics, and 8 moreFabrication, Oscillations, Monolithic Integration, Microelectromechanical Devices, High Sensitivity, High Spatial Resolution, Electrical And Electronic Engineering, and CMOS analog integrated circuit design
A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS substrate is presented. The integration of the FBAR to the CMOS substrate is performed with independence of FBAR or CMOS fabrication... more
A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS substrate is presented. The integration of the FBAR to the CMOS substrate is performed with independence of FBAR or CMOS fabrication technologies. Wafer-level transfer is carried out to obtain a suspended FBAR above CMOS substrates of different technologies, whose resonant frequency is found in the 2.4 GHz band. The electrical interconnection between the FBAR and CMOS is provided by at least two conducting posts, which at the same time offer mechanical support to the resonator's structure. Experimental characterization results and Q-factor comparison with conventional FBAR technologies are discussed.