(PDF) Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route

Silicon carbide (SiC x) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiC x thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiC x thin film innovations, focusing on PVD and other non-PVD and non-CVD SiC x coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance. keywords physical vapor deposition; silicon carbide

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Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route

Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route

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